FDS8962C Datasheet, MOSFET, Fairchild Semiconductor

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FDS8962C Features and benefits

* Q1: N-Channel 7.0A, 30V RDS(on) = 0.030Ω @ VGS = 10V RDS(on) = 0.044Ω @ VGS = 4.5V
* Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VG.

FDS8962C Application

where low in-line power loss and fast switching are required. D1 D1 D2 D2 5 6 Q2 4 3 SO-8 Pin 1 S1 G1 G2 S2 7.

FDS8962C Description

These dual N- and P-Channel enhancement mode power ﬁeld effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching.

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